The Sputtering system creates thin film layers of varied materials by a physical vapor deposition (PVD) method. Sputtering is a mechanism by which atoms are dislodged from the surface of a material because of collision with high-energy particles. Thus, Sputtering is a physical vapor deposition (PVD) technique wherein atoms or molecules are ejected from a target material by high-energy particle bombardment so that the ejected atoms or molecules can condense on a substrate as a thin film.  

Available process for the following materials

Ti, Ni, Cr, Au, Pt, Ag, Co, Al, Mg, Mo, Ta, Hf, CeO2, Al2O3, TiN, TiOx, AlN, AlScN, SiO2, Ta2O5. 

(processes development and calibrations may be required to achieve desired film properties and for implementing new materials) 

Features  

• Automated process control. 
• Five 2" magnetron sputtering sources are available for R.F. and D.C. sputtering. 
• One 3" magnetron sputtering source (Center) is available for R.F. and D.C. sputtering. 
• Load lock for a quick sample and coating availability. 
• Main chamber vacuum that can reach 5x10-8 Tor. 
• 1500 Watt DC generator with integral 4-way switch box. 
• 600W R.F. generator with an auto-matching network with an automated 3-way R.F. switch box. 
• 300W R.F. generator with an auto-matching network. 
• Gas handling of argon, oxygen, and nitrogen. 
• Substrate holder with the following features: 
• Accommodates substrates up to 3" in diameter. 
• Continuous motorized rotation (0-20RPM) with the controller. 
• Controlled radiant heating up to 850 C with quartz halogen lamps. 
• Water-cooled reflector box. 
• RF/DC biasing capability while rotating / heating/depositing. 
• Removable LN2 substrate holder.