Plasma-enhanced chemical vapor deposition (PECVD) is a process used to deposit SiO2, Si3N4, or SiOxNy dielectric films.  

A plasma of reacting gases is created by R.F. (A.C.) frequency leading to chemical reactions in the chamber. Energy for chemical reactions is provided partly by heating the substrate to a high temperature (350C or below) and partly by the plasma. 

The produced films are typically used for capacitor dielectrics, chemical passivation layers, electrical insulators, reactive ion etching masks, and optical anti-reflective coatings. 

The system enables stress control, high uniformity, tunable index, and conformal SiNx films. 

Features

• Gases: He, SiH4, NH3, N2, SF6, N2O. 
• Processing Temperatures:  80°C to 350°C 
• Electrode Size 11” (279mm) diameter 
• Loading load lock 
• Endpoint Detection optical Emission Interferometry (OEI)  
• R.F. Power Supply Dual range 60/600W 13.56 MHz. 
• Low-frequency R.F. option included. 

Training information

• meeting with the tool owner for presentation and discussion of the desired application, and setting up a strategy for student qualification – 1hr 
• Theoretical introduction to the machine and hands-on training with tool owner or a qualified user – 2hr 
• Qualification test with the tool owner - 1hr