Instrument Specification
Inductively Coupled Plasma (ICP) refers to a system configuration where plasma is generated using inductively coupling RF power in the source while independently controlling the ion energy bombarding the substrate via the applied bias power.
Features
- Plasma generation is done using 2 MHz RF power in the source.
- Bias is applied using 13.56 MHz RF power.
- A chlorine-based system enables etching Al, Cr, AlAs, GaAs, and GaN.
- Gases: BCL3, Cl2, CH4, SF6, Ar, O2, and N2.
Location
Perlman building –1 floor, room 11 (Plasma room)
Staff Contacts
-
Danielle Amit Awaskar
Research & Development Engineer
Training information
- Meeting with the tool owner for presentation and discussion of the desired application, and setting up a strategy for student qualification – 1hr
- Theoretical introduction to the machine and hands-on training with tool owner – 2hr
- Qualification test with the tool owner - 1hr